Additionally, basic dielectric parameters of two structures were investigated in detail using impedance–frequency (Z–f) measurements in a wide frequency range (0.1–1000 kHz) and they were a strong function of frequency because of the existence of Nss, surface polarization, and interlayer.Ī thin (NiS-doped PVP) interface layer was spin-coated on n-Si substrate, and between Au contact were prepared on the surface by the sputtering method and then their basic electrical features, for example, diffusion-potential (VD), doping density of donor-atoms (ND), Fermi-energy (EF), barrier-height (ΦB), and depletion layer-width (WD) were extracted reverse-bias C⁻²-V plots as function frequency and voltage. Both the forward- and reverse-bias conduction mechanisms such as ohmic, space/trap-charge-limited current (SCLC/TCLC), and Poole–Frenkel/Schottky emission (PFE/SE), respectively, were implemented. Experimental results confirmed that the OI improved the performance of MS structure in respect of low Nss, Rs, n, and high rectification rate (RR). The interface states (Nss) energy dependence diagram were also obtained from the voltage-dependent ideality factor (n) and barrier height (BH). Structural and optical properties of nanostructures were investigated through XRD, SEM, EDX, and UV–Vis techniques. In this paper, (Co–TeO2) nanostructures were synthesized using the microwave-assisted method for the fabrication of (PVP:Co–TeO2) as an organic interlayer (OI) at Al/p-Si interface. Thus, the used high-dielectric organic thin film between metal and semiconductor can be also an advantageous for applications in place of conventional metal/oxide/semiconductor (MOS) structures. The value of σac increase with increasing doping rate of NiO. The observed the higher value of dielectric constant (=2.5 for 2%(NiO) and 4.25 for 10 % (NiO)) even at 10 kHz show that (PCBM/NiO:ZnO) thin film can be successfully used instead of conventional low-dielectric SiO2.
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All parameters were found distinctly-function of frequency/voltage owing to the existence of Nss, surface/dipole-polarizations and interlayer particularly at low and intermediate frequencies. The values of complex dielectric-constant/loss (ɛ'/ɛ"), loss tangent (tanδ), ac electrical-conductivity (σac), real/imaginary-components of complex electric modulus (M’, M”) were calculated from the C/G-V measurements as function of frequency between 0.5-2.5V by 100 mV steps.
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For this reason, various-ratio (2, 10, and 20%) NiO doped ZnO layer were coated on the Si(p-type) wafer as an interlayer. In order to study, in detail, the relationship of effect of NiO doping in ZnO on AC electrical-conductivity (σac), complex-permittivity (ɛ*), complex-electric modulus (M*) and interface-states (Nss), we have been used capacitance/conductance-voltage (C/G-V) measurements of the performed Al/PCBM/NiO:ZnO/p-Si structures over wide-range of frequency and voltage.